From 979472812bf8cf3251876f7066d62b06b7c98f50 Mon Sep 17 00:00:00 2001
From: Michael Kohlhase <michael.kohlhase@fau.de>
Date: Sat, 16 May 2020 15:45:07 +0200
Subject: [PATCH] debugging
---
source/BandstructureParameters.en.tex | 2 +-
source/BandstructureParameters.tex | 1 +
source/PhysicalConstants.tex | 4 +++-
source/TwoDimDeviceGeometry.en.tex | 4 ++--
4 files changed, 7 insertions(+), 4 deletions(-)
diff --git a/source/BandstructureParameters.en.tex b/source/BandstructureParameters.en.tex
index 3284d6c..4331f58 100644
--- a/source/BandstructureParameters.en.tex
+++ b/source/BandstructureParameters.en.tex
@@ -8,7 +8,7 @@
\end{definition}
\begin{definition}
- The \defiii[name=valence-band-DOS]{effective}{density}{of state valence bands} usually
+ The \defii[name=valence-band-DOS]{effective}{density}of state valence bands usually
denoted by $\DOSValenceBand$ is a parameter of the electronic band structure of a
semiconductor which describes the dispersion of the energy in the valence band with the
wave vector assuming parabolic energy bands. It can be defined by the corresponding
diff --git a/source/BandstructureParameters.tex b/source/BandstructureParameters.tex
index 9bf344f..e870502 100644
--- a/source/BandstructureParameters.tex
+++ b/source/BandstructureParameters.tex
@@ -10,6 +10,7 @@
\symdef[name=valence-band-edge]{Ev}{E_v}
\symtest{Ev}{\Ev}
+\symi{valence-band-DOS}
\symi{conduction-band-DOS}
\end{modsig}
diff --git a/source/PhysicalConstants.tex b/source/PhysicalConstants.tex
index dae74ea..8eca548 100644
--- a/source/PhysicalConstants.tex
+++ b/source/PhysicalConstants.tex
@@ -1,7 +1,8 @@
\begin{modsig}[creators=miko]{PhysicalConstants}
- \importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{energy}
+ \importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{energy}
\importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{temperature}
\importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{substance-amount}
+ \gimport[smglom/arithmetics]{arithmetics}
\symdef[name=vacuum-dielectric-permitivity]{VacuumDielectricPermitivity}{\varepsilon_0}
\symtest{VacuumDielectricPermitivity}{\VacuumDielectricPermitivity}
@@ -20,6 +21,7 @@
\symtest{BoltzmannConst}{\BoltzmannConst}
\symvariant{BoltzmannConst}{noB}{k}
\symtest[variant=noB]{BoltzmannConst}{\BoltzmannConst[noB]}
+ \symiii{vaccuum}{dielectric}{permitivity}
\end{modsig}
%%% Local Variables:
diff --git a/source/TwoDimDeviceGeometry.en.tex b/source/TwoDimDeviceGeometry.en.tex
index 08cc8b3..562cf89 100644
--- a/source/TwoDimDeviceGeometry.en.tex
+++ b/source/TwoDimDeviceGeometry.en.tex
@@ -1,8 +1,8 @@
\begin{mhmodnl}{TwoDimDeviceGeometry}{en}
\begin{definition}
- In a \trefi[TwoDimDevice]{one-dimensional} \trefi[Device]{device}, we have
+ In a \trefi[TwoDimDevice]{two-dimensional} \trefi[Device]{device}, we have
$\DeviceDomain=\cart{G,\RealNumbers}$, where $\sseteq{G}{\ndim\RealNumbers2}$ is
- \trefii{sufficiently}{regular}.
+ \trefii[PDERegularDomain]{sufficiently}{regular}.
\end{definition}
\end{mhmodnl}
--
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