From c8e318b3a4cafc26f599736ecfa4ce6b005a72c3 Mon Sep 17 00:00:00 2001
From: Michael Kohlhase <michael.kohlhase@fau.de>
Date: Sat, 2 May 2020 15:10:16 +0200
Subject: [PATCH] removing_deprecated_mtrefis
---
source/Charge.en.tex | 4 ++--
source/OneDimDevice.en.tex | 2 +-
source/TwoDimDevice.en.tex | 2 +-
supplement/WIAS-preprint_2263_snippet/hbchapter.tex | 2 +-
4 files changed, 5 insertions(+), 5 deletions(-)
diff --git a/source/Charge.en.tex b/source/Charge.en.tex
index c70fb41..3e0ba6a 100644
--- a/source/Charge.en.tex
+++ b/source/Charge.en.tex
@@ -3,8 +3,8 @@
The \defii{total}{charge} denoted by $\TotalCharge$ describes the net charge entering
the right hand side of the Poisson equation. It is composed by the
\trefii[DopingProfile]{doping}{profile} and the
- \mtrefi[DensityElectrons?electron-density]{electron} and
- \mtrefii[DensityHoles?hole-density]{hole}{densities} by
+ \trefi[DensityElectrons?electron-density]{electron} and
+ \trefii[DensityHoles?hole-density]{hole}{densities} by
$\TotalCharge
=\realtimes{-\ElementaryCharge,\realminus{\realplus{\DopingProfile,\DensityHoles},\DensityElectrons}}$.
\end{definition}
diff --git a/source/OneDimDevice.en.tex b/source/OneDimDevice.en.tex
index 430ded2..2b40651 100644
--- a/source/OneDimDevice.en.tex
+++ b/source/OneDimDevice.en.tex
@@ -1,7 +1,7 @@
\begin{mhmodnl}{OneDimDevice}{en}
\begin{definition}
A \trefi[Device]{device} is called \defi{one-dimensional}, iff all of its
- \mtrefi[Device?device-property]{properties} \trefi[DeviceGeometry]{domain} are
+ \trefi[Device?device-property]{properties} \trefi[DeviceGeometry]{domain} are
translation-invariant in two directions
\end{definition}
\end{mhmodnl}
diff --git a/source/TwoDimDevice.en.tex b/source/TwoDimDevice.en.tex
index 8ccc72d..84b2704 100644
--- a/source/TwoDimDevice.en.tex
+++ b/source/TwoDimDevice.en.tex
@@ -1,7 +1,7 @@
\begin{mhmodnl}{TwoDimDevice}{en}
\begin{definition}
A \trefi[Device]{device} is called \defi{two-dimensional}, iff all of its
- \mtrefi[Device?device-property]{properties} \trefi[DeviceGeometry]{domain} are
+ \trefi[Device?device-property]{properties} \trefi[DeviceGeometry]{domain} are
translation-invariant in one direction.
\end{definition}
\end{mhmodnl}
diff --git a/supplement/WIAS-preprint_2263_snippet/hbchapter.tex b/supplement/WIAS-preprint_2263_snippet/hbchapter.tex
index 0f28638..6ea8d00 100644
--- a/supplement/WIAS-preprint_2263_snippet/hbchapter.tex
+++ b/supplement/WIAS-preprint_2263_snippet/hbchapter.tex
@@ -152,7 +152,7 @@ constants. The (absolute) \trefii[PoissonParameters]{dielectric}{permittivity}
$\DielectricPermitivity =
\realtimes{\VacuumDielectricPermitivity,\RelativeDielectricPermitivity}$ is given as the
product of the \trefiii[PoissonParameters]{vacuum}{dielectric}{permittivity}
-$\VacuumDielectricPermitivity$ and the \mtrefi[PoissonParameters?relative-dielectric-permittivity]{relative permittivity} of the semiconductor
+$\VacuumDielectricPermitivity$ and the \trefi[PoissonParameters?relative-dielectric-permittivity]{relative permittivity} of the semiconductor
$\RelativeDielectricPermitivity$ in static (low frequency) limit. The carrier mobilities
$\ElectronMobility$ and $\HoleMobility$, the conduction and valence band densities of
states $\DOSConductionBand$ and $\DOSValenceBand$ as well as the conduction and valence band-edge energies $E_c$ and
--
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