From ec6708e16c291f51f1dabd0637069c6661ebf883 Mon Sep 17 00:00:00 2001
From: Michael Kohlhase <michael.kohlhase@fau.de>
Date: Sat, 23 Nov 2019 18:03:09 +0100
Subject: [PATCH] replace_atrefi*_with_mtrefi
---
source/Charge.en.tex | 4 ++--
source/OneDimDevice.en.tex | 2 +-
source/TwoDimDevice.en.tex | 2 +-
supplement/WIAS-preprint_2263_snippet/hbchapter.tex | 3 +--
4 files changed, 5 insertions(+), 6 deletions(-)
diff --git a/source/Charge.en.tex b/source/Charge.en.tex
index cf3844a..4db65dc 100644
--- a/source/Charge.en.tex
+++ b/source/Charge.en.tex
@@ -3,8 +3,8 @@
The \defii{total}{charge} denoted by $\TotalCharge$ describes the net charge entering
the right hand side of the Poisson equation. It is composed by the
\trefii[DopingProfile]{doping}{profile} and the
- \atrefii[DensityElectrons]{electron}{electron}{density} and
- \atrefii[DensityHoles]{hole densities}{hole}{density} by
+ \mtrefi[DensityElectrons?electron-density]{electron} and
+ \mtrefi[DensityHoles?hole-density]{hole densities} by
$\TotalCharge
=\realtimes{-\ElementaryCharge,\realminus{\realplus{\DopingProfile,\DensityHoles},\DensityElectrons}}$.
\end{definition}
diff --git a/source/OneDimDevice.en.tex b/source/OneDimDevice.en.tex
index 57d0751..430ded2 100644
--- a/source/OneDimDevice.en.tex
+++ b/source/OneDimDevice.en.tex
@@ -1,7 +1,7 @@
\begin{mhmodnl}{OneDimDevice}{en}
\begin{definition}
A \trefi[Device]{device} is called \defi{one-dimensional}, iff all of its
- \atrefii[Device]{properties}{device}{property} \trefi[DeviceGeometry]{domain} are
+ \mtrefi[Device?device-property]{properties} \trefi[DeviceGeometry]{domain} are
translation-invariant in two directions
\end{definition}
\end{mhmodnl}
diff --git a/source/TwoDimDevice.en.tex b/source/TwoDimDevice.en.tex
index 43eea08..8ccc72d 100644
--- a/source/TwoDimDevice.en.tex
+++ b/source/TwoDimDevice.en.tex
@@ -1,7 +1,7 @@
\begin{mhmodnl}{TwoDimDevice}{en}
\begin{definition}
A \trefi[Device]{device} is called \defi{two-dimensional}, iff all of its
- \atrefii[Device]{properties}{device}{property} \trefi[DeviceGeometry]{domain} are
+ \mtrefi[Device?device-property]{properties} \trefi[DeviceGeometry]{domain} are
translation-invariant in one direction.
\end{definition}
\end{mhmodnl}
diff --git a/supplement/WIAS-preprint_2263_snippet/hbchapter.tex b/supplement/WIAS-preprint_2263_snippet/hbchapter.tex
index 188b0d5..0f28638 100644
--- a/supplement/WIAS-preprint_2263_snippet/hbchapter.tex
+++ b/supplement/WIAS-preprint_2263_snippet/hbchapter.tex
@@ -152,8 +152,7 @@ constants. The (absolute) \trefii[PoissonParameters]{dielectric}{permittivity}
$\DielectricPermitivity =
\realtimes{\VacuumDielectricPermitivity,\RelativeDielectricPermitivity}$ is given as the
product of the \trefiii[PoissonParameters]{vacuum}{dielectric}{permittivity}
-$\VacuumDielectricPermitivity$ and the \atrefiii[PoissonParameters]{relative
- permittivity}{relative}{dielectric}{permittivity} of the semiconductor
+$\VacuumDielectricPermitivity$ and the \mtrefi[PoissonParameters?relative-dielectric-permittivity]{relative permittivity} of the semiconductor
$\RelativeDielectricPermitivity$ in static (low frequency) limit. The carrier mobilities
$\ElectronMobility$ and $\HoleMobility$, the conduction and valence band densities of
states $\DOSConductionBand$ and $\DOSValenceBand$ as well as the conduction and valence band-edge energies $E_c$ and
--
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