debugging

source/BandstructureParameters.en.tex

@@ -8,7 +8,7 @@
 \end{definition}
      
 \begin{definition}
-  The \defiii[name=valence-band-DOS]{effective}{density}{of state valence bands} usually
+  The \defii[name=valence-band-DOS]{effective}{density}of state valence bands usually
   denoted by $\DOSValenceBand$ is a parameter of the electronic band structure of a
   semiconductor which describes the dispersion of the energy in the valence band with the
   wave vector assuming parabolic energy bands.  It can be defined by the corresponding

source/BandstructureParameters.tex

@@ -10,6 +10,7 @@
  
 \symdef[name=valence-band-edge]{Ev}{E_v}
 \symtest{Ev}{\Ev}
+\symi{valence-band-DOS}
 \symi{conduction-band-DOS}
 \end{modsig}
 

source/PhysicalConstants.tex

 \begin{modsig}[creators=miko]{PhysicalConstants}
-   \importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{energy}
+  \importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{energy}
   \importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{temperature}
   \importmhmodule[mhrepos=BaseMH/physics,dir=units/en]{substance-amount}
+  \gimport[smglom/arithmetics]{arithmetics}
   \symdef[name=vacuum-dielectric-permitivity]{VacuumDielectricPermitivity}{\varepsilon_0}
   \symtest{VacuumDielectricPermitivity}{\VacuumDielectricPermitivity}
  
@@ -20,6 +21,7 @@
   \symtest{BoltzmannConst}{\BoltzmannConst}
   \symvariant{BoltzmannConst}{noB}{k}
   \symtest[variant=noB]{BoltzmannConst}{\BoltzmannConst[noB]}
+  \symiii{vaccuum}{dielectric}{permitivity}
 \end{modsig}
 
 %%% Local Variables:

source/TwoDimDeviceGeometry.en.tex

 \begin{mhmodnl}{TwoDimDeviceGeometry}{en}
   \begin{definition}
-    In a \trefi[TwoDimDevice]{one-dimensional} \trefi[Device]{device}, we have
+    In a \trefi[TwoDimDevice]{two-dimensional} \trefi[Device]{device}, we have
     $\DeviceDomain=\cart{G,\RealNumbers}$, where $\sseteq{G}{\ndim\RealNumbers2}$ is
-    \trefii{sufficiently}{regular}.
+    \trefii[PDERegularDomain]{sufficiently}{regular}.
   \end{definition}
 \end{mhmodnl}